JSAB Technologies Limited is a high-tech company specializing in the R&D, design and sales of power semiconductor components. It is led by the professor of Hong Kong University of Science and Technology, and the only IEEE Fellow engaged in silicon-based power semiconductor research in Greater China. The company won the excellent enterprise award of the national competition, and the fourth place in the category of "new generation information technology" industry in Guangdong Province in the 2020 China Innovation and entrepreneurship competition.
JSAB Technologies has three mature product lines: low-voltage SGT-MOSFET (Split Gate Metal Oxide Semiconductor Field Effect Transistor), high-voltage SJ-MOSFET (Super Junction Metal Semiconductor Oxide Field Effect Transistor) and trench Field-stop IGBT (Insulated Gate Bipolar Transistor). The high voltage products are mainly applied in high-speed rail, electric vehicles, new energy, industrial control and other fields. The low voltage products are mainly used in 5G base stations, power conversion, green household appliances, consumer electronics and so on. The products of JSAB Technologies have been recognized by many application customers and have been running stably in many fields.
Over the years, JSAB Technologies aims to become the leading power semiconductor enterprise with the advanced technology in Greater China, focusing on the R&D, design and sales of power semiconductor products. While insisting on creating long-term value for the society, JSAB Technologies also pursues growth unswervingly, makes unremitting efforts to promote innovation and responds to every challenge actively.
Bachelor, master and doctor of Department of Electrical Engineering, University of Toronto, Canada
Professor of Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
In 2012, he was awarded IEEE Fellow, the only IEEE Fellow in the silicon-based power semiconductor industry in Greater China.
In 2015, he was elected the chairman of the International Symposium on Power Semiconductor Devices and ICs (ISPSD), the industry's top power semiconductor summit. He is the first chairman from Greater China since the summit was held.
In 2020, he was elected as to the Global Hall of Fame of the International Symposium on Power Semiconductor Devices and ICs (ISPSD). The other two scholars are Dr. Thomas laska, R&D director of Infineon IGBT, and Dr. John palmour, founder of Cree.