SJ-MOS

Low on-state resistance
High switching speed
High reliability
Low switching loss

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600/650V rated SJ-MOS has been designed and developed by JSAB Technologies. By employing deep trench process and smaller cell pitch, our products have achieved better performance than other domestic SJ-MOS. In addition, novel edge termination of SJ-MOS ensures smaller chip area and higher reliability.

Thanks to the excellent performance of SJ-MOS products, our SJ-MOS products can be used in PD charging, LED power, high-end telecom power and charging stations.

Product	Package	Polarity	V_DS	I_D	V_GS	V_GS(th)		R_DS(on)@ 10V		Datasheet
			V_DS	I_D	V_GS	Min.	Max.	Typ.	Max.
			V	A	V	V	V	mΩ	mΩ
select	select	select	select	select	select	select	select	select	select	Reset
JMH60R080S	TO-247	N	600	42	±30	2.5	4.5	65	80
JMH60R080F	TO-247	N	600	42	±20	2.5	4.5	65	80
JMP60R160S	TO-220	N	600	22	±30	2.5	4.5	125	160
JMG60R160S	TO-220MF	N	600	11	±30	2.5	4.5	125	160
JMG60R160F	TO-220MF	N	600	11	±20	2.5	4.5	125	160
JMG60R320S	TO-220MF	N	600	11	±30	2.5	4.5	270	320
JMD60R320S	TO-252	N	600	12	±30	2.5	4.5	270	320
JMN60R320S	DFN 8x8	N	600	11	±30	2.5	4.5	270	320
JCD60R380S	TO-252	N	600	11	±30	2.5	4.5	318	380
JCF60R380S	TO-220F	N	600	9.6	±30	2.5	4.5	318	380
JMH65R100S	TO-247	N	650	35	±30	2.5	4.5	80	100
JMP65R100F	TO-220	N	650	25	±20	2.5	4.5	80	100
JMH65R100F	TO-247	N	650	35	±20	2.5	4.5	80	100
JMP65R190S	TO-220	N	650	20	±30	2.5	4.5	150	190
JMG65R190S	TO-220MF	N	650	10	±30	2.5	4.5	150	190
JMG65R380S	TO-220MF	N	650	9	±30	2.5	4.5	320	380
JMD65R380S	TO-252	N	650	10	±30	2.5	4.5	320	380
JMN65R380S	DFN 8x8	N	650	9.6	±30	2.5	4.5	320	380

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