About Us
JSAB : Johnny Sin And Buddies
JSAB Technologies Limited is a semiconductor company specializing in the R&D, manufacturing, and commercialization of advanced power semiconductor device. Led by an IEEE Fellow and professor from the Hong Kong University of Science and Technology（HKUST）, our technical team brings decades of deep industry expertise to advance power semiconductor technology.
In 2020, the company placed fourth in the "New Generation Information Technology" division at the Guangdong China Innovation and Entrepreneurship Competition, going on to receive the Outstanding Enterprise Award at the national finals. JSAB was recognized as a Shenzhen Specialized and Innovative SME in 2023, followed by national designation as a Specialized and Innovative "Little Giant" Enterprise in 2025.
Our product portfolio spans four major lines: high-voltage IGBT discrete device and module, mid- and low-voltage MOSFET（SGT-MOS / SJ-MOS）, SiC product（Diode / MOSFET / module）, and GaN product. Today, the JSAB product solutions are widely deployed across high-speed rail, electric vehicles, renewable energy, industrial control, embodied intelligence, 5G infrastructure, AI servers, green appliances, and consumer electronics.
With industry-leading performance, quality, and service, JSAB is committed to becoming a premier power semiconductor leader in Greater China, delivering long-term value to our customers worldwide.
Founder Background:
Bachelor, master and doctor of Department of Electrical Engineering, University of Toronto, Canada
Professor of Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
IEEE Fellow
Main Honors:
In 2012, he was awarded IEEE Fellow, the only IEEE Fellow in the silicon-based power semiconductor industry in Greater China.
In 2015, he was elected the chairman of the International Symposium on Power Semiconductor Devices and ICs (ISPSD), the industry's top power semiconductor summit. He is the first chairman from Greater China since the summit was held.
In 2020, he was elected as to the Global Hall of Fame of the International Symposium on Power Semiconductor Devices and ICs (ISPSD). The other two scholars are Dr. Thomas laska, R&D director of Infineon IGBT, and Dr. John palmour, founder of Cree.
