GaN HEMT

JSAB has developed 650V-rated Enhancement-mode Gallium Nitride High Electron Mobility Transistors (GaN E-mode HEMTs), independently designed and developed by JSAB with full intellectual property rights. Featuring unique gate and buffer layer designs, JSAB GaN E-mode HEMTs achieve an optimal trade-off between on-resistance (RDS(on)) and breakdown voltage (BV). They also deliver superior switching speed, enhanced surge withstand capability, and high reliability.

Leveraging the advantages of low on-resistance, minimal switching losses, and zero reverse recovery charge, JSAB GaN E-mode HEMTs are ideally suited for fast charging adapters, server power supplies, EV charging infrastructure, and photovoltaic inverters.