SiC MOSFET

JSAB has developed 1200V-rated Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs), independently designed and developed by JSAB with full intellectual property rights. Featuring advanced trench-gate cell geometry and optimized termination design, JSAB SiC MOSFETs achieve an exceptional trade-off between ultra-low on-resistance (RDS(on)) and high breakdown voltage (BV). They also deliver extremely low gate charge (Qg), outstanding switching characteristics, superior short-circuit robustness, and high reliability.

Leveraging the advantages of low on-resistance, minimal switching losses, zero reverse recovery charge, and stable high-temperature performance, JSAB SiC MOSFETs are ideally suited for new energy vehicle (NEV) traction systems, photovoltaic inverters, energy storage systems, EV charging infrastructure, server power supplies, telecom power systems, and industrial variable-frequency drives.