Products SiC-Diode
  • SiC-Diode
  • SiC-Diode
  • SiC-Diode
  • SiC-Diode
  • TO-247-2L(SiC-Diode)
  • SiC-Diode

SiC-Diode

  • Low conduction voltage drop

  • No reverse recovery charge

  • High surge resistance

  • High avalanche tolerance

  • high reliability

The goal of continuous improvement of reliability and efficiency in a core technology is always pursued by of JSAB Technologies. Based on some intellectual property rights of silicon carbide, our 1200V rated silicon carbide diodes have been developed. By employing unique cell and edge termination design, our silicon carbide diodes achieve a better trade-off between conduction voltage drop (VF) and breakdown voltage (BV) without degradation of surge ability, avalanche tolerance and reliability. 

Silicon carbide diodes are mainly used in telecom power supply, server power supply, electric vehicle, charging station, photovoltaic, etc.

ProductPackageVRRMIFQcIFSMDatasheet
VAnCA
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JDH20B120PJTO-247120010121135
JDP20B120PJTO-220120010121135

600V SiC diode: In Progress.

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