IGBT Discretes

Low saturation conduction voltage drop
Low switching loss
high reliability
High short circuit tolerance
High parameter consistency

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The IGBT released by JSAB Technologies adopts advanced trench FS structure, which is independently developed by JSAB Technologies and holds relevant intellectual property rights.

By employing "Taiko" wafer processing technology and fine groove pattern structure, both conduction and switching loss of the IGBT devices have been reduced significantly. Those devices are suitable for applications such as industrial frequency conversion, servo drive and industrial power supply.Thanks to the innovative active cell and unique sustaining voltage structure design of JSAB Technologies' IGBT, our products ensure high short-circuit capability, durability and long-term reliability.

Striving for the highest standards in reliability quality, JSAB Technologies' IGBT products have passed 1000 hours high temperature reverse bias (HTRB, HTGB) test at 175 ℃.

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Product	Package	BVCES	IC	VGE(th)		VCEsat		Datasheet
		BVCES	IC	Min.	Max.	Typ.	Max.
		V	A	V	V	V	V
								Reset
JHB15N60EE2	TO-263	600	15	5.2	7.2	1.7	2
JHG15N60EE2	TO-220MF	600	15	5.2	7.2	1.7	2
JHP15N60EE2	TO-220	600	15	5.2	7.2	1.7	2
JHB20N60FE2	TO-263	600	20	5	7	1.7	2
JHG20N60FE2	TO-220MF	600	20	5	7	1.7	2
JHP20N60FE2	TO-220	600	20	5	7	1.7	2
JHB25N60EE	TO-263	600	25	5	7	1.5	1.8
JHG25N60EE	TO-220MF	600	25	5	7	1.5	1.8
JHH25N60EE	TO-247	600	25	5	7	1.5	1.8
JHP25N60EE	TO-220	600	25	5	7	1.5	1.8
JHB30N60EE2	TO-263	600	30	5	7	1.6	1.9
JHG30N60EE2	TO-220MF	600	30	5	7	1.6	1.9
JHH30N60EE2	TO-247	600	30	5	7	1.6	1.9
JHP30N60EE2	TO-220	600	30	5	7	1.6	1.9
JHH40N60HE	TO-247	600	40	4	6	1.6	2.05
JIA40N65RH	TO-3PN	650	40	4	6	1.55	1.95
JHH75N60HE	TO-247	600	75	4	6	1.55	1.9
JHH50N65HE	TO-247	650	50	4	6	1.75	2.1
JHH75N65LE	TO-247	650	75	4.2	6.2	1.3	1.5
JHH75N65HE2	TO-247	650	75	4.2	6.2	1.55	1.9

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JHB15N60EE2

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IGBT Modules

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