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专注功率半导体器件的研发设计销售
安建科技现已开发出600V~650V耐压等级超级结(Super-junction , SJ) MOSFET ，由安建科技自主研发设计并掌握相关知识产权，采用深沟槽工艺，为国内目前元胞尺寸最小的SJ-MOS产品之一。
安建科技的SJ-MOS产品采用独特的终端设计，在有效减小芯片面积的同时实现了器件的高可靠性。
基于SJ-MOS的技术特点，其主要应用于PD充电、LED电源、服务器电源，电动汽车充电桩等。
| Product | Package | Polarity | VDS | ID | VGS | VGS(th) | RDS(on)@ 10V | Datasheet | ||
| Min. | Max. | Typ. | Max. | |||||||
| V | A | V | V | V | mΩ | mΩ | ||||
| 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 重置筛选 |
| JMH60R080S | TO-247 | N | 600 | 42 | ±30 | 2.5 | 4.5 | 65 | 80 | |
| JMH60R080F | TO-247 | N | 600 | 42 | ±20 | 2.5 | 4.5 | 65 | 80 | |
| JMP60R160S | TO-220 | N | 600 | 22 | ±30 | 2.5 | 4.5 | 125 | 160 | |
| JMG60R160S | TO-220MF | N | 600 | 11 | ±30 | 2.5 | 4.5 | 125 | 160 | |
| JMG60R160F | TO-220MF | N | 600 | 11 | ±20 | 2.5 | 4.5 | 125 | 160 | |
| JMG60R320S | TO-220MF | N | 600 | 11 | ±30 | 2.5 | 4.5 | 270 | 320 | |
| JMD60R320S | TO-252 | N | 600 | 12 | ±30 | 2.5 | 4.5 | 270 | 320 | |
| JMN60R320S | DFN 8x8 | N | 600 | 11 | ±30 | 2.5 | 4.5 | 270 | 320 | |
| JCD60R380S | TO-252 | N | 600 | 11 | ±30 | 2.5 | 4.5 | 318 | 380 | |
| JCF60R380S | TO-220F | N | 600 | 9.6 | ±30 | 2.5 | 4.5 | 318 | 380 | |
| JMH65R100S | TO-247 | N | 650 | 35 | ±30 | 2.5 | 4.5 | 80 | 100 | |
| JMP65R100F | TO-220 | N | 650 | 25 | ±20 | 2.5 | 4.5 | 80 | 100 | |
| JMH65R100F | TO-247 | N | 650 | 35 | ±20 | 2.5 | 4.5 | 80 | 100 | |
| JMP65R190S | TO-220 | N | 650 | 20 | ±30 | 2.5 | 4.5 | 150 | 190 | |
| JMG65R190S | TO-220MF | N | 650 | 10 | ±30 | 2.5 | 4.5 | 150 | 190 | |
| JMG65R380S | TO-220MF | N | 650 | 9 | ±30 | 2.5 | 4.5 | 320 | 380 | |
| JMD65R380S | TO-252 | N | 650 | 10 | ±30 | 2.5 | 4.5 | 320 | 380 | |
| JMN65R380S | DFN 8x8 | N | 650 | 9.6 | ±30 | 2.5 | 4.5 | 320 | 380 | |
